Quantum Computing

Electrons in silicon have relatively long spin coherence times, which motivates research into the use of quantum dots in Si/SiGe for use as prototype qubits.

Selected publications on this topic

Spin blocakade and LET in a Si/SiGe double quantum dot.
“Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot,” Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson, Nature Physics 4, 540 (2008). [Journal Article]

Single electron occupation in a Si quantum dot.
“Single-electron quantum dot in Si/SiGe with integrated charge sensing,” C.B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R.H. Blick, D.E. Savage, M.G. Lagally, S.N. Coppersmith, and M.A. Eriksson, Appl. Phys. Lett. 91, 213103 (2007). [Journal Article | Cond-Mat]

Kondo Effect in Silicon Quantum Dots
“Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot,” L.J. Klein, D.E. Savage, and M.A. Eriksson, Appl. Phys. Lett. 90, 033103 (2007). [Journal Article | Cond-Mat]

Schottky Top-Gates for Silicon Quantum Dots
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads, K.A. Slinker, K.L.M. Lewis, C.C. Haselby, S. Goswami, L.J. Klein, J.O. Chu, S.N. Coppersmith, Robert Joynt, R.H. Blick, Mark Friesen, and M.A. Eriksson, N. Journ. Phys. 7, 246 (2005). [Journal Article]