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Silicon Valley Splitting

Quantum Dot

Bulk silicon has a six-fold orbital degneracy can be lifted by both strain and quantum confinement.

Under strain, the six-fold valley degeneracy in the silicon conduction band is reduced to two-fold. Quantum confinement further reduces this degeneracy, resulting in a non-degneratre conduction band minimum.

Publications on this topic

“Controllable Valley Splitting in Si/SiGe Quantum Devices,” Srijit Goswami, K. A. Slinker, Mark Friesen, L. M. McGuire, J. L. Truitt, Charles Tahan, L. J. Klein, J. O. Chu, P. M. Mooney, D. W. van der Weide, Robert Joynt, S. N. Coppersmith, and M.A. Eriksson, Nature Physics 3, 41 (2007).
[Journal Article]

“Magnetic Field Dependence of Valley Splitting in Realistic Si/SiGe Quantum Wells,” M. Friesen, M.A. Eriksson, S.N. Coppersmith, Appl. Phys. Lett. 89, 202106 (2006).
[Journal Article]

“Valley splitting in strained silicon quantum wells,” Timothy B. Boykin, Gerhard Klimeck, M.A. Eriksson, Mark Friesen, S. N. Coppersmith, Paul von Allmen, Fabiano Oyafuso, and Seungwon Lee, Appl. Phys. Lett. 84, 115 (2004).
[Journal Article]

Research Areas

Silicon Nanostructures

Quantum Computing

Silicon Valley Splitting

Silicon Nanomembranes

Intermittent Contact AFM

Nanowires and Nanorods