SEM micrograph of a Si/SiGe quantum dot with an integrated charge sensor that can be used to verify single-electron occupation of the dot.

Single electron occupation in a Si quantum dot.
“Single-electron quantum dot in Si/SiGe with integrated charge sensing,” C.B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R.H. Blick, D.E. Savage, M.G. Lagally, S.N. Coppersmith, and M.A. Eriksson, Appl. Phys. Lett. 91, 213103 (2007).

Kondo Effect in Silicon Quantum Dots
“Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quan- tum dot,” L.J. Klein, D.E. Savage, and M.A. Eriksson, Appl. Phys. Lett. 90, 033103 (2007).

Schottky Top-Gates for Silicon Quantum Dots
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads, K.A. Slinker, K.L.M. Lewis, C.C. Haselby, S. Goswami, L.J. Klein, J.O. Chu, S.N. Coppersmith, Robert Joynt, R.H. Blick, Mark Friesen, and M.A. Eriksson, N. Journ. Phys. 7, 246 (2005).

Coulomb Blockade in a Si/SiGe Etched Quantum Dot
"Coulomb Blockade in a Si:SiGe Two-Dimensional Electron Gas Quantum Dot," L.J. Klein, K. Slinker, J.L. Truitt, S Goswami, K.L.M. Lewis, S.N. Coppersmith, D.W. van der Weide, Mark Friesen , R. Blick, D.E. Savage, M.G. Lagally, Charlie Tahan , Robert Joynt, M.A. Eriksson (University of Wisconsin Madison), J.O. Chu, J.A. Ott, P.M. Mooney (IBM Research Division, T. J. Watson Research Center),
Appl. Phys. Lett. 84, 4047-4049 (2004).