Silicon Nanostructures

Silicon/silicon-germanium heterostructures allow the fabrication of gated quantum dots in modulation doped heterostructures.

The image at left shows an SEM micrograph of a Si/SiGe quantum dot with an integrated charge sensor that can be used to verify single-electron occupation of the dot.

Selected publications on this topic

Single electron occupation in a Si quantum dot.
“Single-electron quantum dot in Si/SiGe with integrated charge sensing,” C.B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R.H. Blick, D.E. Savage, M.G. Lagally, S.N. Coppersmith, and M.A. Eriksson, Appl. Phys. Lett. 91, 213103 (2007).

Kondo Effect in Silicon Quantum Dots
“Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot,” L.J. Klein, D.E. Savage, and M.A. Eriksson, Appl. Phys. Lett. 90, 033103 (2007).

Schottky Top-Gates for Silicon Quantum Dots
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads, K.A. Slinker, K.L.M. Lewis, C.C. Haselby, S. Goswami, L.J. Klein, J.O. Chu, S.N. Coppersmith, Robert Joynt, R.H. Blick, Mark Friesen, and M.A. Eriksson, N. Journ. Phys. 7, 246 (2005).