Kondo Effect in Silicon Quantum
Dots
The valley degree of freedom in silicon acts in many ways
similar to the spin degree of freedom. This raises the
question of whether there is a valley Kondo effect in
silicon quantum dots. Sean Shiau, Suci Chutia and I
computed the conductance and showed that there is indeed
such an effect, and its phenomenology is much richer than
the corresponding effect in GaAs dots. We computed magnetic
field dependences and other signatures so that the effect
can be unambiguously identified by experimenters.
Shiueyuan Shiau,
Sucismita Chutia, and
Robert Joynt,
condmat/0611722, selected for the June 11, 2007 issue of
Virtual Journal of Nanoscale Science & Technology,
Phys. Rev. B 75, 195345 (2007); Shiueyuan Shiau and Robert
Joynt, arXiv:0708.0408, Phys. Rev. B 76, 205314 (2007)
Valley Kondo Effect in Silicon Quantum Dots
SpinValley Kondo Effect in Multielectron Silicon Quantum Dots
