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Kondo Effect in Silicon Quantum Dots

The valley degree of freedom in silicon acts in many ways similar to the spin degree of freedom. This raises the question of whether there is a valley Kondo effect in silicon quantum dots. Sean Shiau, Suci Chutia and I computed the conductance and showed that there is indeed such an effect, and its phenomenology is much richer than the corresponding effect in GaAs dots. We computed magnetic field dependences and other signatures so that the effect can be unambiguously identified by experimenters.

Shiue-yuan Shiau, Sucismita Chutia, and Robert Joynt, cond-mat/0611722, selected for the June 11, 2007 issue of Virtual Journal of Nanoscale Science & Technology, Phys. Rev. B 75, 195345 (2007); Shiue-yuan Shiau and Robert Joynt, arXiv:0708.0408, Phys. Rev. B 76, 205314 (2007)

Valley Kondo Effect in Silicon Quantum Dots
Spin-Valley Kondo Effect in Multi-electron Silicon Quantum Dots

  

 

 

 

 

 


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